p a r a m e t er l v a l ue u n it c o ll e c t o r - b a s e v o l t a ge v c bo 700 v c o ll e c t o r - e m i t t e r v o l t a ge v c eo 400 v e m i t t e r - b a s e v o l t a ge v ebo 9 v c o ll e c t o r c u r r e nt i c 5 .0 a b a s e c u rr e nt i b 2 .0 a t o t a l d i ss i p a t i o n at p t ot 75 w m a x . o p e r a t i ng j u n c t i o n t e m p e r a t u re t j 150 o c s t o r a ge t e m p e r a t u re t s tg - 55 ~ 150 o c d e s cr i p t i on p a r a m e t er s y m b ol t e s t c o n d i t i ons m i n. t y p. m ax. u n it c o ll e c t o r c u t - o ff c u r r e n t i c bo v ce = 700 v , i e =0 10 ua e m i t t e r c u t - o ff c u r r e nt i ebo v eb = 6 . 0 v , i c =0 10 ua c o ll e c t o r - e m i t t e r s u s t a i n i n g v o l t age v c eo i c = 10 m a , i b =0 400 v dc c u r r e n t g a in h fe v ce = 5 v , i c = 1 . 0a 15 30 c o ll e c t o r - e m i t t e r s a t u r a t i o n v o l t age v c e(s a t) i c = 4 . 0 a ,i b = 1 . 0a 1 .0 v b a s e - e m i tt e r s a t u r a t i o n v o l t a ge v be(s a t) i c = 2 . 0 a ,i b = 0 . 5a 1 .5 v c u rr e n t g a i n b a nd w i d t h p r odu ct f t v ce = 10 v , i c = 0 . 5a 4 m hz t u r n o ff t i me t s i b1 =-i b2 = 0 . 5 a, 2 .0 3 .0 4 .0 us s il i c on n p n , h i g h p o w e r t r a n s i s t o r s i n a p l a s t i c en v e l o p e , p r i m a r i l y f o r u s e i n h i g h - s p e e d p o w e r s w i t c h in g c i r c u i t s . e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 25 ) a b s ol u t e m a x i m u m r a t in g s ( t a = 25 ) s i l i c on n p n p o w e r t r a n s i st or ? E13005-250 pb E13005-250 mje power transistor pb free plating product ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/1 mje 130 05 series p r o d u c t s p ec i f i ca t ion 1. b 2. c 3. e unit:mm free datasheet http:///
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